Electronic device having liquid crystal display device

ABSTRACT

There is provided a configuration of an active matrix type liquid crystal display integrated with a peripheral driving circuit in which the surface area of regions excluding pixels is minimized. Further, the reliability of an apparatus having such a configuration is improved.  
     A configuration is provided in which a sealing material  104  is provided on a peripheral driving circuit. With this configuration, layers  240  and  237  made of a resin material are provided under the sealing material  104 . This makes it possible to moderate the application of a local stress to the peripheral driving circuit due to the presence of a filler  103  included in the sealing material  104 . Thus, breakage of the peripheral driving circuit can be avoided.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a configuration of an activematrix type liquid crystal display integrated with a peripheral drivingcircuit.

[0003] 2. Description of Related Art

[0004] Active matrix type liquid crystal displays have been known. Theyhave a configuration in which an active matrix circuit and a peripheraldriving circuit for driving the same circuit are integrated on a glasssubstrate or quartz substrate.

[0005] In such a liquid crystal panel integrated with a peripheraldriving circuit, a thin film semiconductor that forms thin filmtransistors provided in the peripheral driving circuit must be acrystalline silicon thin film. The reason for this is that theperipheral driving circuit must operate at a high speed.

[0006] Reliability is an important consideration for a liquid crystalpanel integrated with a peripheral driving circuit as described above.Specifically, what is important for such a device is the stability ofimage display in relation to the environment where it is used.

[0007] Especially, a crystalline silicon film has a problem in that itis significantly susceptible to the variation of characteristics withtime and the influence of the environment where it is used because ofthe high level of characteristics of itself.

[0008] Specifically, a problem arises in that it is affected by stressesexerted thereon during the fabrication and handling of a liquid crystalpanel and by moisture that permeates into the liquid crystal panel.

[0009] Further, a liquid crystal panel integrated with a peripheraldriving circuit is designed in an intention to minimize the surface areaof regions unnecessary for screen display. For example, efforts are putin minimizing the surface area occupied by the peripheral drivingcircuit.

[0010] Meanwhile, in a liquid crystal display, an encapsulating materialfor enclosing liquid crystal, referred to as “sealing material” isprovided at a peripheral portion to hold liquid crystal between a pairof substrates.

[0011] As an effort to minimize the surface area of regions unnecessaryfor screen display as described above, the surface area occupied by thesealing material must be also reduced. A configuration for this purposeis known in which a sealing material is provided on a peripheral drivingcircuit to minimize the surface area excluding pixels (referred to as“frame”).

[0012] In the case of an active matrix type liquid crystal displayintegrated with a peripheral driving circuit, faults that occur in theperipheral driving circuit can be a problem.

[0013] Especially, the configuration in which a sealing material isprovided on a peripheral driving circuit to minimize the surface areaexcluding pixels (referred to as “frame”) is subjected to more faults atthe peripheral driving circuit.

[0014] This problem occurs due to the following reasons. A sealingmaterial includes a kind of spacer referred to as “filler” formaintaining a gap between substrates.

[0015] In general, a peripheral driving circuit is at a high level ofintegration. As a result, thin film transistors and wiring lines locateddirectly under such fillers are subjected to a pressure from the fillers(it is assumed that this pressure can be locally quite high) and arehence vulnerable to line breakage and poor contact.

[0016] Meanwhile, a spherical substrate gap maintaining means referredto as “spacer” is used also in an active matrix region. However, sincean active matrix region is at a lower level of integration, faultsattributable to the presence of a spacer are not as problematic as in aperipheral driving circuit.

[0017] It is an object of the invention disclosed in this specificationto provide a configuration for an active matrix type liquid crystaldisplay incorporating a peripheral driving circuit, in which the surfacearea excluding the region of a pixel matrix circuit is minimized.

[0018] On the basis of the above-described configuration, it is anotherobject of the invention to provide a configuration that preventsbreakage of thin film transistors provided on a peripheral drivingcircuit due to a pressure exerted by a sealing material.

[0019] It is still another object of the invention to provide aconfiguration for an active matrix type liquid crystal displayincorporating a peripheral driving circuit, which prevents thin filmtransistors from being adversely affected by a stress exerted thereonduring the fabrication and handling of the liquid crystal panel andwhich prevents moisture from permeating into the liquid crystal panel.

SUMMARY OF THE INVENTION

[0020] In order to solve the above-described problems, as a mode ofcarrying out the invention disclosed in this specification, there isprovided an active matrix type liquid crystal display integrated with aperipheral driving circuit as shown in FIG. 1 having a configuration inwhich:

[0021] a sealing material 104 is provided on the peripheral drivingcircuit; and

[0022] resin layers 237 and 240 are provided between the peripheraldriving circuit and the sealing material.

[0023] The above-described configuration makes it possible to prevent ahigh pressure from being locally applied to the peripheral drivingcircuit by a filler 103 included in the sealing material 104, therebypreventing the breakage of the peripheral driving circuit.

[0024] Further, by providing the sealing material on the peripheraldriving circuit, a configuration can be obtained in which the surfacearea excluding the pixel region is minimized.

[0025] In the above-described configuration, each of the resin layersare preferably formed as multilayered form. This is effective inmoderating the pressure exerted thereon by the filler in the sealingmaterial.

[0026] Further, it is advantageous to form an auxiliary capacitor in theactive matrix region using the resin layers. This makes it possible toprovide a capacitor having a required value in a pixel.

[0027] The thickness of the resin layers is preferably equal to greaterthan one-half of the diameter of a filler in the sealing material. Thisis a condition advantageous in preventing the pressure of a filler inthe sealing material from being exerted on the peripheral drivingcircuit even if the filler sinks into the resin layers. Further, inorder to moderate a pressure exerted on the peripheral driving circuit,a highly elastic material such as polyimide may be chosen for the resinlayers. When the resin layers are formed as a multilayered form, it willbe sufficient if the collective thickness is equal to or greater thanone-half of the diameter of a filler in the sealing material.

[0028] In order to solve the above-described problems, as specificallyillustrated in FIG. 6, there is provided a configuration in which aliquid crystal material 314 is sandwiched and held between a pair ofglass substrates 301 and 318, characterized in that:

[0029] an active matrix circuit (constituted by a thin film transistorindicated by 302) and a peripheral driving circuit (constituted by athin film transistor indicated by 303) are provided on the surface ofone of the substrates 301;

[0030] a resin material is provided on the peripheral driving circuit asinterlayer insulating films 306, 309, and 311;

[0031] the liquid crystal material 314 is sealed with a sealing material315;

[0032] the resin material and the sealing material partially overlapwith each other; and

[0033] the resin material is blocked from the outside by the sealingmaterial.

[0034] In the context of the present invention, the term “a surface of asubstrate” means a surface of a glass or quartz substrate and further asurface of a glass or quartz substrate having a silicon oxide film or asilicon nitride film (so-called inorganic film) formed thereon.

[0035] The use of the above-described configuration makes it possible tomoderate a stress exerted on the peripheral driving circuit and toenhance sealing capability in the region indicated by 300 in FIG. 6.

[0036] Especially, a high degree of adhesion can be achieved in theregion indicated by 300 in FIG. 6 where the sealing material 315 is incontact with a silicon nitride film 305 which is an inorganic substance(inorganic film) except the region of wiring line 308. This makes itpossible to achieve a high degree of adhesion in this region, therebypreventing external moisture from permeating.

[0037] In order to moderate a stress, the interlayer insulating filmsare preferably formed from polyimide resin. The sealing material ispreferably formed from epoxy resin to enhance the sealing actionfurther.

[0038] The interlayer insulating films can be formed without usingpolyimide resin.

[0039] For example, acrylic resin is also used to form the interlayerinsulating film.

[0040] The active matrix type liquid crystal displays integrated with aperipheral circuit shown in FIGS. 1 and 6 are used for display devicesof photographic apparatuses such as portable video movie apparatuses,portable personal computers, and various information terminals.

BRIEF DESCRIPTION OF THE DRAWINGS

[0041]FIG. 1 is a partial sectional view of an active matrix type liquidcrystal display which utilizes the present invention.

[0042]FIGS. 2A through 2E illustrate fabrication steps to provide theconfiguration shown in FIG. 1.

[0043]FIGS. 3A through 3D illustrate fabrication steps to provide theconfiguration shown in FIG. 1.

[0044]FIG. 4 illustrates a fabrication step to provide the configurationshown in FIG. 1.

[0045]FIG. 5 is a partial sectional view of another active matrix typeliquid crystal display which utilizes the present invention.

[0046]FIG. 6 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

[0047]FIG. 7 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

[0048]FIG. 8 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

[0049]FIG. 9 is a partial sectional view of a liquid crystal panel whichutilizes the present invention.

[0050]FIG. 10 is a partial sectional view of a liquid crystal panelwhich utilizes the present invention.

[0051]FIGS. 11A through 11F are views schematically showing apparatuseswhich utilize the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0052] A first embodiment of the present invention will now bedescribed.

[0053] The present embodiment employs a configuration in which a sealingmaterial is provided on a region where a peripheral driving circuit islocated. Further, in order to prevent damage to the peripheral drivingcircuit caused by a stress exerted by a filler included in the sealingmaterial, a configuration is employed in which a buffer layer made ofpolyimide is provided on the peripheral driving circuit.

[0054]FIG. 1 is a partial sectional view of an active matrix type liquidcrystal display according to the present embodiment. FIG. 1 shows aconfiguration referred to as “peripheral driving circuit integratedtype” having a structure in which a peripheral driving circuit 100 andan active matrix circuit 200 are integrated on the same substrate.

[0055] In the configuration shown in FIG. 1, a sealing portion indicatedby 104 is provided over the peripheral driving circuit 100. This sealingportion has a sealing function to prevent liquid crystal filled in aspace 105 (a gap between the substrates) from leaking out.

[0056] The sealing portion 104 is formed from a resin material. Thesealing portion 104 is formed by applying the resin material with aspinner, patterning it, and further baking it. Alternatively, it isformed using a printing process.

[0057]103 designates a filler which is required for maintaining aninterval between the substrates. This filler is made of a resin materialand has a cylindrical configuration. In the present embodiment, theresin material used for forming the sealing material 104 includes thefiller 103 which is mixed therein in advance.

[0058] Resin layers 237 and 240 are provided under the sealing material104. The resin layers are used as interlayer insulating films anddielectrics for an auxiliary capacitor. The resin layers have a functionof moderating a pressure exerted on the peripheral driving circuit 100by the filler in the sealing material in the region of the peripheraldriving circuit 100.

[0059]FIGS. 2A through 2E, FIGS. 3A through 3D, and FIG. 4 illustratefabrication steps to provide the configuration shown in FIG. 1. Thefabrication steps described below relate to a configuration in which ann-channel type thin film transistor and a p-channel type thin filmtransistor are provided in a peripheral driving circuit and in which ap-channel type thin film transistor is provided in an active matrixcircuit.

[0060] More particularly, in this configuration, a low concentrationimpurity region is provided in the n-channel type thin film transistor,and a high concentration impurity region is provided between asource/drain region and a channel formation region of the p-channel typethin film transistor.

[0061] Such a configuration makes it possible to suppress deteriorationof the characteristics of the n-channel type thin film transistor of theperipheral driving circuit. Further, the active matrix circuit can beconfigured to achieve a low OFF current value and less variation of anON current value.

[0062]FIGS. 2A through 2E, FIGS. 3A through 3D, and FIG. 4 illustratefabrication steps. FIGS. 2A through 2E illustrate steps for fabricatingthe n-channel type thin film transistor (and the region around the same)provided in the peripheral driving circuit on the left side thereof.They illustrate steps for fabricating the thin film transistor (and theregion around the same) provided in the active matrix region on theright side thereof.

[0063] First, as shown in FIG. 2A, a backing film (not shown) is formedon a glass substrate 201. A silicon oxide film is used as the backingfilm. This backing film has a function of preventing diffusion ofimpurities from the glass substrate 201 and moderating a stress to theglass substrate.

[0064] Next, an amorphous silicon film (not shown) is formed on thebacking film to a thickness of 500 Å using a plasma CVD process.Further, the amorphous silicon film is irradiated with laser beams to becrystallized into a crystalline silicon film. The crystalline siliconfilm may be obtained using a heating process or irradiation with intensebeams.

[0065] This crystalline silicon film is patterned to form active layersindicated by 202 and 203 of thin film transistors. 202 designates anactive layer of the n-channel type thin film transistor provided in theperipheral driving circuit 100. 203 designates an active layer of thep-channel type thin film transistor provided in the active matrixcircuit 200.

[0066] Although only two thin film transistors are shown in the figures,tens of thousands to hundreds of thousands (or more) of thin filmtransistors are integrated in an actual configuration.

[0067] After forming the active layers, a plasma CVD process isperformed to form a silicon oxide film having a thickness of 1000 Å as agate insulating film 204. Thus, the state shown in FIG. 2A is achieved.

[0068] In the state shown in FIG. 2A, an aluminum film (not shown) isformed by a sputtering process to a thickness of 4000 Å in order toconfigure gate electrodes (and gate lines). This aluminum film includes0.1% by weight of scandium.

[0069] Next, an anodic oxidation film (not shown) having dense filmquality is formed to a thickness of 100 Å. This anodic oxidation iscarried out using an ethylene glycol solution including 3% of tartaricacid as the electrolyte. This solution is used after being neutralizedwith aqueous ammonia.

[0070] The anodic oxidation film has a function of enhancing theadhesion of resist masks to be provided later. A silicon nitride film ora metal film may be used instead of the anodic oxidation film.Alternatively, an aluminum oxide film may be formed by means of plasmaoxidization in an oxidizing atmosphere.

[0071] Next, the aluminum film is patterned using resist masks 205 and206. This step forms aluminum patterns indicated by 207 and 208 whichserve as bases for the gate electrodes. Thus, the state shown in FIG. 2Bis achieved.

[0072] In the state shown in FIG. 2B, anodic oxidation is performedusing the aluminum patterns 207 and 208 as anodes. This step formsporous anodic oxides (it is not appropriate to express them as “films”)indicated by 211 and 212. The anodic oxides are grown a distance of 5000Å.

[0073] This anodic oxidation is carried out using an aqueous solutionincluding 3% of oxalic acid as the electrolyte.

[0074] At this step, the presence of the resist masks 205 and 206 causesthe anodic oxidation to selectively proceed on side surfaces of thealuminum patterns 207 and 208. The reason is that the presence of theresist masks 205 and 206 prevents the electrolyte from contacting theupper surfaces of the aluminum patterns 207 and 208. The patternsindicated by 209 and 210 here will become gate electrodes later. Thus,the state shown in FIG. 2C is achieved.

[0075] Next, the resist masks 205 and 206 are removed. Then, anodicoxidation films having dense film quality are formed. This anodicoxidation is performed using an ethylene glycol solution including 3% oftartaric acid and neutralized with aqueous ammonia as the electrolyte.

[0076] At this step, the electrolyte penetrates the porous anodic oxidefilms 211 and 212. Therefore, dense anodic oxidation films indicated by213 and 214 are formed.

[0077] This step defines gate electrodes 209 and 210. The surfaces ofthese electrodes are covered by the dense anodic oxidation films 213 and214. These electrodes and wiring lines extending therefrom serve aswiring lines for a first layer. Thus, the state shown in FIG. 2D isachieved.

[0078] Next, the implantation of P (phosphorus) ions is carried out onthe entire surface. At this step, P ions are implanted at a relativelyhigh concentration in order to form source and drain regions (FIG. 2E).

[0079] At this step, P ions are implanted in regions 215, 217, 218, and220. P ions are not implanted in regions 216 and 219.

[0080] Then, the porous anodic oxide films 211 and 212 are removed.Thus, the state shown in FIG. 3A is achieved. In this state, P ions areimplanted again. At this step, P ions are implanted in a dose less thanthat in the doping condition shown in FIG. 2E.

[0081] Thus, the regions indicated by 221, 222, 223, and 224 are formedas low concentration impurity regions, and a channel formation region225 of the n-channel type transistor is defined (FIG. 3A).

[0082] Next, the region where the n-channel type thin film transistor isto be formed is covered with a resist mask 226, and B ions are implantedin such a state. This step is performed on a condition that the regionsindicated by 227 and 228 become the source and drain regions of thep-channel type thin film transistor.

[0083] At this step, the regions indicated by 227 and 228 become thesource and drain regions. Further, the regions indicated by 229 and 230are formed as regions which exhibit stronger p-type properties thanthose in the regions indicated by 227 and 228.

[0084] This is because the concentration of P elements included in theregions 229 and 230 is lower than that in the regions 227 and 228.

[0085] Specifically, more B elements are required in the regions 227 and228 to neutralize P elements and, as a result, the regions 229 and 230exhibit stronger p-type properties. Further, the region indicated by 231is defined as the channel formation region of the p-channel type thinfilm transistor.

[0086] When the implantation of impurity ions is complete, the resistmask 226 is removed. Then, laser irradiation is performed to activatethe implanted impurities and to anneal damage on the semiconductor filmscaused by the impact of the ions.

[0087] Next, a first interlayer insulating film 232 is formed. A siliconnitride film having a thickness of 4000 Å is formed here as theinterlayer insulating film 232 using a plasma CVD process.

[0088] Then, contact holes are formed to form wiring lines (electrodes)233 through 236 in a second layer. Thus, the state shown in FIG. 3C isachieved.

[0089] Next, a second interlayer insulating film 237 is formed. A resinfilm having a thickness of 15000 Å is formed here as the interlayerinsulating film 237. It is formed using a spin coating process.

[0090] Next, a contact hole is formed to form a wiring line (electrode)238 in a third layer. At the same time, a light shield film 239 forshading the thin film transistor provided in the active matrix circuit200 is formed. This light shield film 239 forms an auxiliary capacitorin cooperation with a pixel electrode which is opposite thereto across ainterlayer insulating film (resin film) to be formed later. Thus, thestate shown in FIG. 3D is achieved.

[0091] Next, a third interlayer insulating film 240 is formed as shownin FIG. 4. A resin layer having a thickness of 5000 Å is formed here asthe third interlayer insulating film 240 using a spin coating process.Then, a contact hole is formed to form a pixel electrode 241 using ITO.

[0092] In the present embodiment, an auxiliary capacitor is formed bythe light shield film 239 and the pixel electrode which are provided soas to sandwich the third interlayer insulating film (resin film) 301.

[0093] Further, a rubbing film 242 is formed. The rubbing film 242 ismade of resin and is formed using a printing process. In the presentembodiment, the rubbing film is formed only in the region of the activematrix circuit. A rubbing process is carried out after the rubbing film242 is formed.

[0094] Then, an opposite substrate 108 is provided as shown in FIG. 1.An opposite electrode 107 and a rubbing film 106 are formed on theopposite substrate 108. The opposite substrate 108 and the substrateshown in FIG. 4 is put together to complete the configuration shown inFIG. 1.

[0095] A second embodiment of the present invention will now bedescribed.

[0096] The present embodiment is an example in which bottom-gate typethin film transistors are used in a liquid crystal display integratedwith a peripheral driving circuit.

[0097]FIG. 5 is a sectional view corresponding to FIG. 1. The presentembodiment is different from the configuration shown in FIG. 1 in thestructure of the thin film transistors. The configuration is otherwisesimilar to that shown in FIG. 1.

[0098] A third embodiment of the present invention will now bedescribed.

[0099]FIG. 6 schematically shows the configuration of the presentembodiment. FIG. 6 is a schematic sectional view of an active matrixtype liquid crystal display integrated with a peripheral drivingcircuit.

[0100] In FIG. 6, 301 and 318 designate a pair of glass substrates thatconstitute a liquid crystal panel. A liquid crystal material, an activematrix circuit, and a peripheral driving circuit for driving the activematrix circuit are provided in a gap between the pair of glasssubstrates.

[0101]302 designates a thin film transistor provided in the activematrix circuit portion. Although only one thin film transistor isprovided in FIG. 6, in practice, thin film transistors are provided in aquantity at least equal to the number of pixels.

[0102]303 designates a thin film transistor provided in the peripheraldriving circuit. Although only one thin film transistor 303 is providedin FIG. 6, in practice, a combination of p-channel type and n-channeltype thin film transistors is provided in quantities required forforming a shift register circuit and a buffer circuit.

[0103]304 designates a interlayer insulating film. The gate insulatingfilm 304 is constituted by a silicon oxide film. 305 designates asilicon nitride film that constitutes a first interlayer insulatingfilm.

[0104]306 designates a resin interlayer film made of polyimide thatconsitutes the first interlayer insulating film in combination with thesilicon nitride film 305. The resin interlayer film 306 made ofpolyimide is characterized in that its surface can be flattened.

[0105]307 designates a line which extends from the drain of the thinfilm transistor 303 provided in the peripheral driving circuit and whichis connected to the source of the thin film transistor 302 provided inthe pixel matrix circuit.

[0106]308 designates a line connected to the source of the thin filmtransistor 303 provided in the peripheral driving circuit. This line 308constitues an external terminal of the liquid crystal panel.

[0107]309 designates a resin interlayer film made of polyimide thatconstitutes a second interlayer insulating film. 310 designates a lightshield film made of titanium formed on the resin interlayer film 309that constitutes the second interlayer insulating film. This lightshield film 310 is provided to prevent the thin film transistor 302 frombeing irradiated with light.

[0108]311 designates a resin interlayer film made of polyimide thatconstitutes a third interlayer insulating film. 312 designates an ITOfilm that constitutes a pixel electrode. The ITO film 312 and the lightshield film 310 form an auxiliary capacitor through the resin interlayerfilm 311. Such a configuration makes it possible to obtain a requiredauxiliary capacitor without reducing the aperture ratio.

[0109] The resin interlayer films 306, 309 and 311 can be formed withoutusing polyimide resin. For example, acrylic resin is also used to formthe interlayer insulating film.

[0110]313 designates an orientation film made of polyimide. Thisorientation film 313 exerts an orientation regulating force on liquidcrystal 314 which is in contact therewith.

[0111]315 designates epoxy resin for sealing the liquid crystalmaterial. The liquid crystal material 314 is held between the pair ofglass substrates 318 and 301 by the epoxy resin 315.

[0112] The epoxy resin 315 includes glass fibers referred to as “filler”for maintaining the gap for the liquid crystal layer.

[0113]316 designates an orientation film made of polyimide provided onthe opposite substrate (the substrate 318 is referred to as “oppositesubstrate”). 317 designates an opposite electrode.

[0114] The present embodiment is characterized in that the resin films311, 309, and 306 that constitute interlayer films overlap the epoxyresin 315 that constitutes a sealing material in regions except a partof the epoxy resin 315.

[0115] This makes it possible to moderate a stress using the resininterlayer films made of polyimide and to prevent moisture frompermeating from the outside of the panel using the epoxy resin thatconstitutes a sealing material.

[0116] The resin films indicated by 311, 309, and 306 are elastic andhave a function of moderating a stress exerted externally.

[0117] However, they substantially have no function as a barrier toprevent the penetration of moisture because they absorb moisture.

[0118] On the other hand, the epoxy resin 315 that constitutes a sealingmaterial is rigid and substantially has no function of moderating astress, but it has a sufficient function of blocking moisture.

[0119] The use of the configuration disclosed in the present embodimentallows the effects of both of those components to be demonstrated.

[0120] Especially, the degree of sealing can be improved where the epoxyresin film and the polyimide resin film do not overlap each other at thepart. Specifically, since epoxy resin and polyimide exhibit pooradhesion to each other, the arrangement to prevent them from overlappingeach other at the part indicated by 300 makes it possible to enhance asealing effect provided by epoxy resin in such a part.

[0121] It is thus possible to provide a function of sealing liquidcrystal in the cell at the part indicated by 300 and to obtain aconfiguration that prevents impurities and dusts from entering theliquid crystal layer from the outside.

[0122]FIG. 7 is a sectional view of a region where the wiring line 308is not present. As apparent from FIG. 7, in the region indicated by 350,a high degree of adhesion can be achieved between the sealing material315 and the silicon nitride film 305 because they are in direct contactwith each other.

[0123] The inventors understand that a quite high degree of adhesion canbe achieved between epoxy resin and an inorganic material. It istherefore quite advantageous to enhance the sealing of the liquidcrystal cell at the region indicated by 350 in FIG. 7.

[0124] Further, the structure of the thin film transistor is not limitedto the top-gate type as in the present embodiment but may be a invertedstaggered type as in the second embodiment.

[0125] A fourth embodiment of the present invention will now bedescribed.

[0126] The present embodiment relates to an improvement on theconfiguration according to the third embodiment. Sealing may not bemaintained in the region indicated by 300 in FIG. 6 because of a stepwhich is a result of the presence of the wiring line 308.

[0127] The present embodiment is a device for solving this problem. FIG.8 shows a section of the region 308 in FIG. 8 as viewed from theright-hand side of FIG. 6. The reference numbers in FIG. 8 which are thesame as those in FIGS. 6 and 7 designate the same locations.

[0128] In the present embodiment, a silicon oxide film 400 is formed byapplying a solution after forming the wiring line 308. Such a siliconoxide film has already been put in actual use as a final passivationfilm or flat film of an integrated circuit.

[0129]FIG. 9 shows a section as viewed from the right-hand side of FIG.8. Since a silicon oxide film 400 is formed by applying a solution, astep as indicated by 401 can be filled. This makes it possible toimprove the adhesion of the sealing material formed thereon to achieve apreferable sealing function.

[0130] As apparent from FIG. 9, it is necessary to remove the siliconoxide film 400 above the end of the line 308 to maintain contact withthe outside. FIG. 9 may be regarded as corresponding to FIG. 6.

[0131] A fifth embodiment of the present invention will now bedescribed.

[0132] The present embodiment relates to a configuration for preventingthe breakage and poor conductivity at the line 308 as a result of theapplication of a stress from the sealing material 315 at the end of thesealing material indicated by 300 in FIG. 6.

[0133] The wiring line 308 may be subjected to a stress from the sealingmaterial 315 depending on the type of the epoxy resin that forms thesealing material 315 and hardening conditions for the same, and defectsmay occasionally occur in the wiring line 308.

[0134] Under such circumstances, according to the present embodiment,the wiring line 308 is patterned as shown in FIG. 10 under the sealingmaterial 315.

[0135] This makes it possible to prevent the occurrence of defects atthe wiring pattern 308 as a result of the application of a stress fromthe sealing material 315.

[0136] In addition, it is possible to suppress the reduction of sealingproperties at side surfaces of the pattern of the wiring line 308 asshown in the fourth embodiment.

[0137] A sixth embodiment of the present invention will now bedescribed.

[0138] The present embodiment shows examples of apparatuses havingliquid crystal panels as described in the first through fifthembodiments. Configurations as shown in FIGS. 11A through 11F can beused on liquid crystal panels included in such apparatuses. FIG. 11Ashows a portable information processing terminal. This apparatusincludes a main body 2001 having a display device 2003 utilizing aliquid crystal panel, operation buttons 2004, and a CCD camera 2002.This apparatus has a configuration which allows information to beobtained and transmitted over a telephone network.

[0139] As the liquid crystal panel used for the display device, atransmission type or reflection type panel may be used. A reflectiontype panel is advantageous if power consumption is to be reduced.

[0140]FIG. 11B shows an apparatus referred to as “head mount display”which is put on the head of a user and displays images just in front ofthe eyes, thereby performing a function of displaying images as if theywere real scenes in front of the user. This apparatus includes a liquidcrystal display 2102 at a display device portion and has a structuresuch that a main body 2101 is secured to the head of the user with aband 2103.

[0141] As the liquid crystal panel, a transmission type or reflectiontype panel may be used.

[0142]FIG. 11C shows a so-called car navigation system having a mainbody 2201 on which a display device 2202 utilizing a liquid crystalpanel and operation buttons 2203 are provided and has a function ofreceiving waves from broadcast satellites by an antenna 2204.

[0143] As the liquid crystal panel, a transmission type or reflectiontype panel may be used.

[0144]FIG. 11D shows a portable telephone having a main body 2301 onwhich a display device 2304 utilizing a liquid crystal display, an audioinput portion 2303, an audio output portion 2302, operation buttons2305, and an antenna 2306 are provided.

[0145]FIG. 11E shows a video camera having a main body 2401 on whichoperation buttons 2404, a display device 2402 constituted by a liquidcrystal display, an eyepiece 2403 for viewing images displayed on thedisplay device 2402, and a tape holder 2405 for containing a magnetictape for storing photographed images are provided.

[0146] As the liquid crystal panel forming the display device 2402, atransmission type panel is normally used which forms images bymodulating light from a back-light device.

[0147]FIG. 11F shows a projection type projector in which a displaydevice 2503 for optically modulating light from a light source isprovided at a main body 2501 thereof. The display device 2503 shown inFIG. 11F is a device constituted by a reflection type liquid crystalpanel.

[0148] An image which has been optically modulated by the display deviceis magnified by an optical system 2504 and is projected on a screen2505. An image is viewed from the side of the main body as an imageprojected on the screen 2505.

[0149] The use of the invention disclosed in this specification makes itpossible to provide a configuration of an active matrix type liquidcrystal display integrated with a peripheral driving circuit in whichthe surface area excluding the region of a pixel matrix circuit isminimized.

[0150] Specifically, by employing a configuration in which a sealingmaterial is provided on a peripheral driving circuit, the surface areaexcluding a pixel region can be minimized. Such a configuration furthermakes it possible to prevent damage to the peripheral driving circuitdue to a pressure exerted by the sealing material.

[0151] The use of the invention disclosed in this specification makes itpossible to prevent moisture from permeating into a thin film transistorcircuit and to prevent a stress exerted on a liquid crystal panel fromadversely affecting thin film transistors.

[0152] Specifically, a configuration can be obtained which prevents thinfilm transistors from being adversely affected by a stress exertedthereon during the fabrication and handling of s liquid crystal paneland prevents moisture from permeating into the liquid crystal panel.

[0153] It should be understood that the foregoing description is onlyillustrative of the invention. Various alternatives and modificationscan be devised by those skilled in the art without departing from theinvention. Accordingly, the present invention is intended to embrace allsuch alternatives, modifications and variances which fall within thescope of the appended claims.

What is claimed is:
 1. An active matrix type liquid crystal displayintegrated with a peripheral driving circuit comprising: a sealingmaterial provided on said peripheral driving circuit; and a resin layerformed between said peripheral driving circuit and said sealingmaterial.
 2. A liquid crystal display according to claim 1, wherein saidresin layer is formed as multilayered form.
 3. A liquid crystal displayaccording to claim 1, wherein said resin layer is used to form anauxiliary capacitor in an active matrix region.
 4. A liquid crystaldisplay according to claim 1, wherein said resin layer has a thicknessequal to or greater than one-half of the diameter of a filler in saidsealing material.
 5. A liquid crystal display according to claim 1,wherein said resin layer comprises polyimide resin.
 6. A liquid crystaldisplay according to claim 1, wherein said resin layer comprises acrylicresin.
 7. A photographic apparatus including an active matrix typeliquid crystal display integrated with a peripheral driving circuit,said display comprising: a sealing material provided on said peripheraldriving circuit; and a resin layer formed between said peripheraldriving circuit and said sealing material.
 8. A photographic apparatusaccording to claim 7, wherein said resin layer is formed as amultilayered form.
 9. A photographic apparatus according to claim 7,wherein said resin layer is used to form an auxiliary capacitor in anactive matrix region.
 10. A photographic apparatus according to claim 7,wherein said resin layer has a thickness equal to or greater thanone-half of the diameter of a filler in said sealing material.
 11. Aphotographic apparatus according to claim 7, wherein said resin layercomprises polyimide resin,
 12. A photographic apparatus according toclaim 7, wherein said resin layer comprises acrylic resin.
 13. Aninformation processing apparatus including an active matrix type liquidcrystal display integrated with a peripheral driving circuit, saiddisplay comprising: a sealing material provided on said peripheraldriving circuit; and a resin layer formed between said peripheraldriving circuit and said sealing material.
 14. An information processingapparatus according to claim 13, wherein said resin layer is formed as amultilayered form.
 15. An information processing apparatus according toclaim 13, wherein said resin layer is used to form an auxiliarycapacitor in an active matrix region.
 16. An information processingapparatus according to claim 13, wherein said resin layer has athickness equal to or greater than one-half of the diameter of a fillerin said sealing material.
 17. An information processing apparatusaccording to claim 13, wherein said resin layer comprises polyimideresin.
 18. An information processing apparatus according to claim 13,wherein said resin layer comprises acrylic resin.
 19. An electronicdevice having a liquid crystal display panel, said liquid crystaldisplay panel comprising: a pair of substrates for sandwiching andholding liquid crystal therebetween; an active matrix circuit and aperipheral driving circuit having thin film transistors on one of saidsubstrates; a sealing member disposed between said substrates forsealing said liquid crystal therebetween, said sealing memberoverlapping said peripheral driving circuit; a first interlayerinsulating film comprising silicon nitride formed on said active matrixcircuit and said peripheral driving circuit; a resin layer formed onsaid first interlayer insulating film, said resin layer covering saidactive matrix circuit and said peripheral driving circuit at leastpartly and including a first organic insulating film and a secondorganic insulating film laminated thereon; a pixel electrode formed onsaid resin layer over said active matrix circuit; a light shielding filmformed between said first organic insulating film and said secondorganic insulating film, said light shielding film overlapping a portionof said pixel electrode; an auxiliary capacitor formed between saidlight shielding film and the overlapping portion of said pixel electrodewith said second organic insulating film interposed therebetween.
 20. Anelectronic device according to claim 19, wherein said thin filmtransistors are a top-gate type.
 21. An electronic device according toclaim 19, wherein said thin film transistors are a bottom-gate type. 22.A display device comprising: a pair of glass substrates for sandwichingand holding liquid crystal therebetween; an active matrix circuit and aperipheral driving circuit provided on the surface of one of saidsubstrates; and a resin material provided on said peripheral drivingcircuit as a interlayer insulating film, wherein said liquid crystal issealed with a sealing material; said resin material and said sealingmaterial partially overlap each other; and said resin material isblocked from the outside by said sealing material.
 23. An electronicdevice having a liquid crystal panel, said panel comprising: a pair ofglass substrates for sandwiching and holding liquid crystaltherebetween; an active matrix circuit and a peripheral driving circuitprovided on the surface of one of said substrates; and a resin materialprovided on said peripheral driving circuit as a interlayer insulatingfilm, wherein said liquid crystal is sealed with a sealing material;said resin material and said sealing material partially overlap eachother; and said resin material is blocked from the outside by saidsealing material.
 24. An electronic device having a liquid crystaldisplay comprising a liquid crystal panel having an active matrixstructure integrated with a peripheral driving circuit, wherein; aninterlayer insulating film of said peripheral driving circuit region anda sealing material for sealing liquid crystal partially overlap witheach other; and said interlayer insulating film is blocked from theoutside by said sealing material.
 25. A display device comprising: apair of glass substrates for sandwiching and holding liquid crystaltherebetween; an active matrix circuit and a peripheral driving circuitprovided on the surface of one of said substrates; and a resin materialprovided on said peripheral driving circuit as a interlayer insulatingfilm, wherein said liquid crystal is sealed with a sealing material madeof epoxy resin; said resin material and said sealing material partiallyoverlap each other; and a peripheral region of said sealing material isin contact with the surface of said substrate or an inorganic materialprovided under said resin material.
 26. An electronic device having aliquid crystal panel, said panel comprising: a pair of glass substratesfor sandwiching and holding liquid crystal therebetween; an activematrix circuit and a peripheral driving circuit provided on the surfaceof one of said substrates; and a resin material made of polyimideprovided on said peripheral driving circuit as a interlayer insulatingfilm, wherein said liquid crystal is sealed with a sealing material madeof epoxy resin; said resin material made of polyimide and said sealingmaterial made of epoxy resin partially overlap each other; and aperipheral region of said sealing material is in contact with thesurface of said substrate or an inorganic material provided under saidresin material made of polyimide.
 27. A display device comprising: apair of glass substrates for sandwiching and holding liquid crystaltherebetween; an active matrix circuit and a peripheral driving circuitprovided on the surface of one of said substrates; and an organic resinmaterial provided on said peripheral driving circuit as a interlayerinsulating film, wherein said liquid crystal is sealed with a sealingmaterial made of epoxy resin; said organic resin material and saidsealing material made of epoxy resin overlap each other on saidperipheral driving circuit; and a portion of said sealing materialoutside said peripheral driving circuit is in contact with the surfaceof said substrate or an inorganic material.
 28. An electronic devicehaving a liquid crystal display, said display comprising: a pair ofglass substrates for sandwiching and holding liquid crystaltherebetween; an active matrix circuit and a peripheral driving circuitprovided on the surface of one of said substrates; and an organic resinmaterial provided on said peripheral driving circuit as a interlayerinsulating film, wherein said liquid crystal is sealed with a sealingmaterial; said organic resin material and said sealing material overlapeach other on said peripheral driving circuit; and a portion of saidsealing material outside said peripheral driving circuit is in contactwith the surface of said substrate or an inorganic material.
 29. Adisplay device according to claim 22 wherein said interlayer insulatingfilm comprises polyimide resin.
 30. A display device according to claim22 wherein said sealing material comprises epoxy resin including afiller.
 31. An electronic device according to claim 23 wherein saidinterlayer insulating film comprises polyimide resin.
 32. An electronicdevice according to claim 23 wherein said sealing material comprisesepoxy resin including a filler.
 33. An electronic device according toclaim 24 wherein said interlayer insulating film comprises polyimideresin.
 34. An electronic device according to claim 24 wherein saidsealing material comprises epoxy resin including a filler.
 35. A displaydevice according to claim 25 wherein said interlayer insulating filmcomprises polyimide resin.
 36. A display device according to claim 25wherein said sealing material comprises epoxy resin including a filler.37. An electronic device according to claim 26 wherein said interlayerinsulating film comprises polyimide resin.
 38. An electronic deviceaccording to claim 26 wherein said sealing material comprises epoxyresin including a filler.
 39. A display device according to claim 27wherein said interlayer insulating film comprises polyimide resin.
 40. Adisplay device according to claim 27 wherein said sealing materialcomprises epoxy resin including a filler.